[21p-A307-1~23] 6.3 Oxide electronics

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-A307-7] Non-Fermi-Liquid Behavior and Antiferromagnetic Mott Transition of Strained La_xSr_1-xVO₃ Films

〇(M2)Mashiro Ogawa¹, Takuto Soma¹, Akira Ohtomo¹ (1.Tokyo Tech., Dept. Chem. Sci. Eng.)

Keywords:

thin films,oxide electronics

SrVO₃ is a strongly correlated transition metal oxide with 3d electron system, which transits from Fermi liquid metal to antiferromagnetic Mott insulator by replacing the A-site with La and controlling the filling.
Furthermore, it is thought that the bandwidth can be controlled by using epitaxial strain.
In this study, we report a systematic investigation of the Mott transition in La_xSr_1-xVO₃ by combining A-site substitutional doping and epitaxial strain.