[21p-C501-1~19] 10.3 Spin devices, magnetic memories and storages

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[21p-C501-1] [Young Scientist Presentation Award Speech] Tunnel magnetoresistance sensor using CoFeSiB soft magnetic layer

〇Takafumi Nakano¹, Kosuke Fujiwara², Seiji Kumagai², Yasuo Ando^1,3, Mikihiko Oogane^1,3 (1.Tohoku Univ., 2.SSF Corp., 3.CSIS, Tohoku Univ.)

Keywords:

Tunnel magnetoresistance effect,Magnetic tunnel junction,Magnetic sensor