Presentation Information

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[21p-C501-14]Perpendicular magnetic anisotropy enhanced by inserting NaF at the Fe/MgO interface

〇(M2)Jieyi Chen¹, Shoya Sakamoto^1,2, Shinji Miwa^1,2 (1.ISSP, Univ. Tokyo, 2.TSQS, Univ. Tokyo)

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Keywords:

Magnetoresistive random access memory,Magnetic tunnel junction,Perpendicular magnetic anisotropy

We have fabricated epitaxial Fe/NaF/MgO multilayers and characterized their surface crystallinity and magnetic property. We observe that the 0.1 nm NaF insertion increases the interfacial perpendicular magnetic anisotropy, while the thicker NaF insertion weakens it. We will discuss the influence of electronegativity and lattice matching on the PMA energy.

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