[21p-C501-1~19] 10.3 Spin devices, magnetic memories and storages

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-C501-5] Bias voltage robustness in double-free-layer stochastic magnetic tunnel junction

〇Rikuto Ota^1,2, Keito Kobayashi^1,2, Keisuke Hayakawa^1,2, Shun Kanai^{1,2,3,4,5,6,7}, Kerem Camsari⁸, Hideo Ohno^1,3,4,9, Shunsuke Fukami^1,2,3,4,9,10 (1.LNS, RIEC, Tohoku Univ., 2.Grad. School Eng., Tohoku Univ., 3.CSIS, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ., 5.JST-PRESTO, 6.DEFS, Tohoku Univ., 7.QST, 8.Dept. Elec. and Comp. Eng., UCSB., 9.CIES, Tohoku Univ., 10.InaRIS)

Keywords:

MTJ,probabilistic computer,unconventional computer