[21p-D903-1~16] 6.4 Thin films and New materials

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[21p-D903-9] Electrical transport properties of La₂O₂Sb epitaxial thin films grown by a molecular beam epitaxy method

〇Yuki Yamamoto¹, Major Marton², Hideyuki Kawasoko¹, Fukumura tomoteru^1,3, Alff Lambert² (1.Tohoku Univ., 2.TU-Darmstadt, 3.Tohoku Univ. WPI-AIMR$CSIS)

Keywords:

Molecural beam epitaxy,semiconductor