[21p-P07-1~2] 15.7 Crystal characterization, impurities and crystal defects

[21p-P07-2] Two-wavelength excited photoluminescence in Si ion-implanted n-GaN ~ Dependence on the BGE energy ~

〇Hrotaka Tokuta¹, Norihiko Kamata¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

Keywords:

Two-wavelength excited photoluminescence,GaN