Presentation Information
[22a-P01-37]Thickness dependence of giant magnetoresistance and giant magneto-thermal resistance effect in Cu/CoFe systems
〇Fuya Makino1,2,3, Takamasa Hirai2, Koichi Oyanagi2,3, Satoru Kobayashi3, Ken-ichi Uchida1,2, Yuya Sakuraba1,2 (1.Univ. of Tukuba, 2.NIMS, 3.Iwate Univ.)
Keywords:
Thermal switch,Magneto-thermal resistance effect,Spintronics
Development of active heat flow controlling technologies has great potential in thermal management for a wide variety of device applications. The giant magneto-thermal resistance (GMTR) effect, a thermal analog of giant magnetoresistance (GMR) effect, refers to the phenomenon that the thermal conductivity depends on a magnetization configuration. Since the GMTR effect enables noncontact and active control of thermal conductivity, it could become a promising principle for spintronic thermal switching devices. Recently, Nakayama et al. observed large change in the cross-plane thermal conductivity depending on the magnetization configuration in an epitaxial Cu/CoFe multilayer. The observed change in thermal conductivity and magneto-thermal resistance ratio are ~25 W/mK and ~150%, which is much greater than the magnetoresistance ratio (~60%), at room temperature, suggesting the existence of unconventional electronic and/or spin-dependent thermal transport mechanisms. To uncover the mechanism and develop the functionalities of the GMTR effect, systematic studies should be necessary. In this study, we investigated the GMTR effect in the Cu/CoFe multilayer with a different layer thickness.