[22p-C501-1~12] 22.1 Joint Session M "Phonon Engineering"

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[22p-C501-10] Phonon Transport in Silicon Nanoporous Structures

〇Masato Ohnishi¹, Liao Yuxuan^1,2, Junichiro Shiomi¹ (1.Univ. of Tokyo, 2.UCLA)

Keywords:

phonon,silicon,porous

In materials with high thermal conductivity, such as silicon, it is possible to suppress thermal conductivity and improve thermoelectric conversion efficiency by utilizing nanostructures such as polycrystalline and porous structures. In recent years, the fabrication of nano-porous structures with neck lengths of around 10 nm has become feasible in experiments. This scale is comparable to the phonon wavelength that contributes to heat transport at room temperature. In this study, we focused on the effect of band modulation in the neck region and conducted a detailed analysis of phonon transport in nano-porous structures.