Presentation Information
[23a-A202-6]Twist-angle dependence of Γ-valley states in the valence band of twisted bilayer WSe2
〇Kei Kinoshita1, Rai Moriya1, Momoko Onodera1, Shota Okazaki2, Yung-Chang Lin3, Yijin Zhang1, Satoru Masubuchi1, Kenji Watanabe4, Takashi Taniguchi4, Ryosuke Senga3, Kazu Suenaga3,5, Takao Sasagawa2, Tomoki Machida1 (1.IIS Univ. Tokyo, 2.MSL Tokyo Tech., 3.AIST, 4.NIMS, 5.SANKEN Osaka Univ.)
Keywords:
TMD,twist,band
We investigated the twist-angle (θBL) dependence of Γ valley states in twisted bilayer WSe2 (tBL-WSe2) via resonant tunneling effect in tBL-WSe2/few-layer h-BN/3-layer WSe2 van der Waals tunnel junctions. Comparing the current-voltage (I-V) curves for the devices with different θBL from 0° to 10°, one peak (referred to as “X”) in the I-V curves is similarly observed for all the devices. However, the emergence of another peak (referred to as “Y”) is highly dependent on θBL: the amplitude of Y normalized by that of X increases in the region of 0°<θBL<4° and 8°<θBL<10°, but decreases in 4°<θBL<8°.