Presentation Information
[23a-A307-5]Interface transport properties of GdTiO3/ EuTiO3 heterostructures grown by gas-source MBE
Noriyuki Takahara1,2, 〇KEI S TAKAHASHI2, Yoshinori Tokura1,2,3, Masashi Kawasaki1,2 (1.Univ. of Tokyo, 2.RIKEN CEMS, 3.Tokyo College, Univ. of Tokyo)
Keywords:
oxide interface,nonreciprocal transport,Molecular beam epitaxy
The noncentrosymmetric materials with Rashba band structure have been attracting much attention for its intriguing physical properties. For example, they are known to exhibit nonreciprocal transport, where electrical conduction depends on the current direction by applying magnetic field perpendicular to the polarization and current due to the induced asymmetry in the Rashba band distribution. In this study, we fabricated an artificial magnetic-polar coexisting interface system via the heterojunction of Mott insulator GdTiO3 and magnetic semiconductor EuTiO3. Electrons were successfully doped to the interface due to valence mismatch, and nonreciprocal transport was observed with peculiar properties originating from the magnetization and polarization at the interface.