[23a-A307-1~9] 6.3 Oxide electronics

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[23a-A307-7] Effect of annealing process and oxygen partial pressure on spin-Hall magnetoresistance in bilayers Pt/MgFe₂O₄

〇Kohei Ueda^1,2,3, Masafumi Sugino¹, Takanori Kida⁴, Masayuki Hagiwara⁴, Jobu Matsuno^1,2,3 (1.Dept. of Phys., Osaka Univ., 2.CSRN, Osaka Univ., 3.OTRI-Spin, Osaka Univ., 4.AHMF, Osaka Univ.)

Keywords:

magnetic insulator,spin Hall magnetoresistance,epitaxial film