Presentation Information

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[23a-B101-4]Monolithic InGaN full-color LED

〇Koichi Goshonoo¹, Koji Okuno¹, Masaki Ohya¹ (1.Toyoda Gosei)

Keywords:

nitride,microLED,monolithic

In this study, we have proposed and demonstrated a monolithic LED structure that has regions that emit light in each of the RGB colors within the same plane. This structure has a plurality of light-emitting layers between the pn junctions of the R and G-LED regions, but carrier recombination occurs only in the light-emitting layer that is in contact with the p-layer side. Therefore, in the R, G, and B LED regions, a monochromatic emission color can be obtained. Since this method can achieve full-color display using conventional semiconductor processes, it is possible to achieve low cost and miniaturization.

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