Presentation Information
[23p-A201-1]Spin diode effect in extended magnetic insulating films
〇Ryuhei Kohno1, Kyongmo An1, Eric Clot1, Vladimir Naletov1, Nicolas Thiery1, Laurent Vila1, Richard Schlitz2, Nathan Beaulieu3, Jamal Ben Youssef3, Abdelmadjid Anane4, Vincent Cros4, Hugo Merbouche4, Thomas Hauet5, Vlad Demidov6, Sergej Demokritov6, Gregoire de Leubens4, Olivier Klein1 (1.Univ. Grenoble Alpes, 2.ETH Zurich, 3.Univ. Bretagne Occidentale, 4.Univ. Paris Saclay, 5.Univ. Lorraine, 6.Univ. of Muenster)
Keywords:
magnonics,spin wave,YIG
Diodes are key components in electronics. Their prized property is to provide non-linear behavior such as asymmetric conductance which allows the transport in the forward direction while blocking it in the reverse. Recently it was thought that the same feature could occur in magnetic materials by electrically shifting the magnon chemical potential towards the energy band minimum.
Using non-local devices, we have performed a comprehensive study of the nonlinear transport properties of magnons, which are electrically emitted or absorbed inside extended YIG films by spin Hall effects via a YIG|Pt interface. In this talk, we reveal that the low-energy magnons are responsible for the spin-diode effect. However, we did not find evidence of a strong spin diode effect expressing a diverging increase of the magnon density. We observe instead a condensation limited by an enhancement of magnon-magnon relaxation rate, which caps the occupation of each mode below a saturation threshold.
Using non-local devices, we have performed a comprehensive study of the nonlinear transport properties of magnons, which are electrically emitted or absorbed inside extended YIG films by spin Hall effects via a YIG|Pt interface. In this talk, we reveal that the low-energy magnons are responsible for the spin-diode effect. However, we did not find evidence of a strong spin diode effect expressing a diverging increase of the magnon density. We observe instead a condensation limited by an enhancement of magnon-magnon relaxation rate, which caps the occupation of each mode below a saturation threshold.