Presentation Information

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)English Presentation

[23p-B203-3]Bandgap of CH₃NH₃SnI₃ perovskites processed by applying high pressure with shear

〇(P)Yongpeng Tang¹, Qing Wang¹, Zenji Horita², Satoshi Iikubo¹ (1.Kyushu Univ., 2.Kyushu Inst. of Tech.)

Keywords:

solar cell

CH₃NH₃(MA)SnI₃, a lead-free halide perovskite, has been recognized as a potential solar cell and thermoelectric material for printed electronics, due to its large absorption coefficient, high charge carrier mobility, long diffusion length of charge carriers and ultralow thermal conductivity. Lü et al. processed MASnI3 by applying a high hydrostatic pressure up to 31 GPa and proved that the structural stability and electrical conductivity of MASnI3 improved after compression [1]. In this study, the bandgap of MASnI₃is studied by combined ultraviolet-visible light diffuse reflectance spectroscopy (UV-Vis) and first-principles calculations (DFT)after processed by the high-pressure torsion (HPT) method [2].

Back to Session information

Presentation Information

[23p-B203-3]Bandgap of CH3NH3SnI3 perovskites processed by applying high pressure with shear

Keywords:

[23p-B203-3]Bandgap of CH₃NH₃SnI₃ perovskites processed by applying high pressure with shear