[16a-A25-1~10] 3.14 Silicon photonics and integrated photonics

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-A25-5] Design of InP-Si Layer Transition Optical Waveguide using CMA-ES with GPUs

〇Hiroya Sakumoto¹, Yuto Miyatake¹, Kasidit Toprasertpong¹, Shinichi Takagi¹, Mitsuru Takenaka¹ (1.The Univ. of Tokyo)

Keywords:

Si photonics,III-V photonics

There is an expectation for an integrated photonics platform that incorporates both III-V semiconductor photonic devices, which are direct bandgap semiconductors, and Si photonic devices. However, alignment errors between layers are inevitable in multilayer optical circuits. Therefore, in this study, we used CMA-ES, a type of evolutionary design strategy, to design a connection structure that is resistant to misalignment between Si and InP layers. We report a 4% improvement in coupling efficiency during alignment errors.