[16a-A33-1~11] FS.1 Focused Session "AI Electronics"

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-A33-1] Prospects for Scale-out of Neural Networks Using Nano-resistive Change Memory Devices

〇Takao Marukame¹, Rei Kusunose¹, Ryoichi Kawai², Yuichiro Mitani² (1.Hokkaido Univ., 2.Tokyo City Univ.)

Keywords:

neural network,synapse device,nano-resisitvie change memory devices

In this presentation, we discuss directions for the development of neural networks using nano-resistive change memory devices. We also present examples of hardware platforms for scaling out research that has traditionally been limited to small-scale NN demonstrations and discuss future prospects.