[16a-D61-1~8] 10.2 Fundamental and exploratory device technologies for spin

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16a-D61-1] Growth and evaluation of highly textured BiSb(001) topological insulator on Si/SiO_x

〇(M1)Wentao Li¹, Huy H.H.¹, S. Takahashi², Y. Hirayama², Y. Kato², Nam Hai Pham¹ (1.Tokyo Tech, 2.Samsung Japan Corp.)

Keywords:

Topological Insulator,Spin orbit torque,BiSb

BiSb topological insulator is a promising spintronic material because of its giant spin Hall effect and high electrical conductivity, which can be applied to various spin-orbit torque (SOT) devices, such as ultrafast and ultralow power SOT-MRAM and SOT domain-wall memory. However, high crystal quality BiSb thin films have been grown so far on single crystalline substrates, such as GaAs(111), GaAs(001), sapphire(0001), and BaF₂(111), mostly by molecular beam epitaxy. For realistic spintronic devices applications, it is essential to grow high quality BiSb by the magnetron sputtering technique on top of amorphous SiO_x, which is frequently used as the insulating material for the BEOL process of Si wafers.
In this work, we demonstrate that by using a combination of TiO_x seed and MgO buffer layers, we can grow highly texture BiSb(001) on SiO_x by the magnetron sputtering technique. Our results show that by using TiO_x/MgO buffer, we can grow high quality BiSb(001) even on amorphous SiO_x.