講演情報
[16a-D61-1]Growth and evaluation of highly textured BiSb(001) topological insulator on Si/SiOx
〇(M1)Wentao Li1, Huy H.H.1, S. Takahashi2, Y. Hirayama2, Y. Kato2, Nam Hai Pham1 (1.Tokyo Tech, 2.Samsung Japan Corp.)
キーワード：
Topological Insulator、Spin orbit torque、BiSb
BiSb topological insulator is a promising spintronic material because of its giant spin Hall effect and high electrical conductivity, which can be applied to various spin-orbit torque (SOT) devices, such as ultrafast and ultralow power SOT-MRAM and SOT domain-wall memory. However, high crystal quality BiSb thin films have been grown so far on single crystalline substrates, such as GaAs(111), GaAs(001), sapphire(0001), and BaF2(111), mostly by molecular beam epitaxy. For realistic spintronic devices applications, it is essential to grow high quality BiSb by the magnetron sputtering technique on top of amorphous SiOx, which is frequently used as the insulating material for the BEOL process of Si wafers.
In this work, we demonstrate that by using a combination of TiOx seed and MgO buffer layers, we can grow highly texture BiSb(001) on SiOx by the magnetron sputtering technique. Our results show that by using TiOx/MgO buffer, we can grow high quality BiSb(001) even on amorphous SiOx.
In this work, we demonstrate that by using a combination of TiOx seed and MgO buffer layers, we can grow highly texture BiSb(001) on SiOx by the magnetron sputtering technique. Our results show that by using TiOx/MgO buffer, we can grow high quality BiSb(001) even on amorphous SiOx.
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