[16p-A25-1~16] 3.14 Silicon photonics and integrated photonics

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A25-15] InGaAs/Si Hybrid Plasmonic Waveguide Photodetector using Ni-InGaAs Alloy

〇Kentaro Komatsu¹, Taketoshi Nakayama¹, Tomohiro Akazawa¹, Yousuke Wakita¹, Hiroya Sakumoto¹, Chao Zang¹, Yuto Miyatake¹, Stephane Monfray², Frederic Boeuf², Rui Tang¹, Kasidit Toprasertpong¹, Shinichi Takagi¹, Takenaka Mitsuru¹ (1.The Univ. of Tokyo, 2.STMicroelectronics)

Keywords:

silicon photonics,photodetector

In silicon photonics, plasmonic waveguide photodetectors are expected to be ultra-compact and high-speed due to the ability to confine light into the nanogap between metals. In this study, we fabricated an InGaAs/Si hybrid plasmonic photodetector using a Ni-InGaAs alloy and confirmed its operation with a responsivity of 0.13 A/W and an operation speed of 12 Gbit/s.