[16p-A33-1~16] FS.1 Focused Session "AI Electronics"

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-A33-14] Development of an ultra-fast operating ion-gating reservoir based on the electrical double layer effect at the graphene/ion-gel interface.

〇Daiki Nishioka¹, Hina Kitano^1,2, Wataru Namiki¹, Kazuya Terabe¹, Takashi Tsuchiya¹ (1.NIMS, 2.Tokyo Univ. Sci.)

Keywords:

physical reservoir computing,electric double layer transistor,ion-gating

Ion gating reservoirs (IGRs), which use the modulation of physical properties by ion gating of material systems as a computational resource, have the advantages of high computational performance, small volume and potential applicability to various material systems, but they also have the problem of slow operation speed compared to electronic devices because they use ions as the information carrier. In this study, a fast-operating IGR based on ion gel with high ionic conductivity and single-layer graphene was fabricated to overcome the challenges of conventional IGRs, and its computational performance was evaluated in various benchmark tasks.