[16p-C302-1~18] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[16p-C302-17] Design and performance of a 10T-SRAM cell using isolated read ports for low voltage operation

〇Tadakatsu Yaguchi¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

Keywords:

SRAM,low voltage operation