[16p-C302-1~18] 13.5 Semiconductor devices/ Interconnect/ Integration technologies | The 85th JSAP Autumn Meeting 2024

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Session Details

Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[16p-C302-1~18]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Mon. Sep 16, 2024 1:00 PM - 6:15 PM JST
Mon. Sep 16, 2024 4:00 AM - 9:15 AM UTC

C302 (Hotel Nikko 30F)

Masaharu Kobayashi(Univ. of Tokyo), Hitoshi Wakabayashi(Tokyo Tech), Shunri Oda(Tokyo Inst. of Tech.)

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1:00 PM - 1:45 PM JST(4:00 AM - 4:45 AM UTC)English Presentation

[16p-C302-1][Fellow International 2024 Special Lecture] 2D Materials - Powering the Next Era of Energy-Efficient Electronics

〇Kaustav Banerjee¹ (1.University of California)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[16p-C302-2]Ohmic Contact to n-Ge by Bi₂Te₃/Ge quasi-vdW Junction

〇WENHSIN CHANG¹, S. HATAYAMA¹, N. OKADA¹, T. IRISAWA¹, Y. SAITO^1,2 (1.AIST, 2.Tohoku Univ.)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[16p-C302-3]Passivation of GeSn surface using ALD-GeO₂

〇Yoshiki Kato¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2, Shigehisa Shibayama¹ (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[16p-C302-4][INVITED] Reliability degradation mechanism in atomic layer deposited amorphous/polycrystalline In-Ga-O channel transistors

〇Takanori Takahashi¹, Mutsunori Uenuma², Masaharu Kobayashi^3,4, Yukiharu Uraoka¹ (1.NAIST, 2.AIST, 3.IIS., Univ. of Tokyo, 4.Univ. of Tokyo)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[16p-C302-5]A Nanosheet Oxide Semiconductor FET Using ALD InZnOx Channel

〇(D)Sunghun Kim¹, Kaito Hikake¹, Zhuo Li¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, The Univ. of Tokyo, 2.d.lab, The Univ. of Tokyo)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-C302-6]A Nanosheet Oxide Semiconductor FET Using ALD InGaZnOx Channel

〇(M2)Kota Sakai¹, Kaito Hikake¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, The Univ. Tokyo, 2.d.lab, The Univ. Tokyo)

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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[16p-C302-7]Study on High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs for Device Scaling in Monolithic 3D Integration

Kaito Hikake¹, 〇Xingyu Huang¹, Sung-hun Kim¹, Kota Sakai¹, Zhuo Li¹, Tomoko Mizutani¹, Takuya Saraya¹, Toshiro Hiramoto¹, Takanori Takahashi², Mutsunori Uenuma², Yukiharu Uraoka², Masaharu Kobayashi^1,3 (1.IIS, Univ. of Tokyo, 2.NAIST, 3.d.lab, Univ. of Tokyo)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-C302-8]Exploration of new intermetallic compounds for advanced interconnects using electron transport database obtained by DFT calculation

〇Masaya Iwabuchi¹, Junichi Koike¹ (1.Tohoku Univ.)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[16p-C302-9]Chemical Vapor Deposition of Cu on Ta using CuI-precursor

〇Yu Miyamoto¹, Satoshi Yamauchi¹ (1.Ibaraki Univ.)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[16p-C302-10]Electrical characteristics of thick-metal-film interconnects on silicon oxide films by directly bonding of Al foils

〇(M2)Saki Murotani¹, Sakura Uehara², Eiji Shikoh¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ., 2.Osaka City Univ.)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[16p-C302-11]Early non-destructive detection of electromigration studied by sub-THz ultrasound

〇Akira Nagakubo¹, Shuhei Izuma¹, Atsushi Nishimura², Yoshiro Kabe², Hirotsugu Ogi¹ (1.The Univ. of Osaka, 2.Skyworks Filter Solutions Japan Co., Ltd.)

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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-C302-12]Optimization of PCM/Selector stacked memory structure for decreasing reset current and improving endurance characteristics

〇Matsuzawa Yuya¹, Katono Kazuhiro¹, Tsukagoshi Takayuki¹, Fujii Shosuke¹, Fujimaki Takeshi¹ (1.Kioxia)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[16p-C302-13]Power-gating architecture and performance of nonvolatile SRAM

Taketo Kato¹, 〇Haruya Oki¹, Yusaku Shiotsu¹, Shuu'ichirou Yamamoto¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[16p-C302-14]Comparative study of gain cells for pseudo-SRAM

〇Sei Yoshida¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[16p-C302-15]A processing-in-memory SRAM cell with XNOR function for energy minimum-point operation

〇Kein Kondo¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[16p-C302-16]Design of an INT4-inference neural-network accelerator macro for energy minimum point operation

〇Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[16p-C302-17]Design and performance of a 10T-SRAM cell using isolated read ports for low voltage operation

〇Tadakatsu Yaguchi¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

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6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[16p-C302-18]Design of a ULVR-SRAM cell for highly stable energy minimum-point operation

〇Katsutoshi Ito¹, Yusaku Shiotsu¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

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Session Details

[16p-C302-1~18]13.5 Semiconductor devices/ Interconnect/ Integration technologies

[16p-C302-1][Fellow International 2024 Special Lecture] 2D Materials - Powering the Next Era of Energy-Efficient Electronics

[16p-C302-2]Ohmic Contact to n-Ge by Bi2Te3/Ge quasi-vdW Junction

[16p-C302-3]Passivation of GeSn surface using ALD-GeO2

[16p-C302-4][INVITED] Reliability degradation mechanism in atomic layer deposited amorphous/polycrystalline In-Ga-O channel transistors

[16p-C302-5]A Nanosheet Oxide Semiconductor FET Using ALD InZnOx Channel

[16p-C302-6]A Nanosheet Oxide Semiconductor FET Using ALD InGaZnOx Channel

[16p-C302-7]Study on High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs for Device Scaling in Monolithic 3D Integration

[16p-C302-8]Exploration of new intermetallic compounds for advanced interconnects using electron transport database obtained by DFT calculation

[16p-C302-9]Chemical Vapor Deposition of Cu on Ta using CuI-precursor

[16p-C302-10]Electrical characteristics of thick-metal-film interconnects on silicon oxide films by directly bonding of Al foils

[16p-C302-11]Early non-destructive detection of electromigration studied by sub-THz ultrasound

[16p-C302-12]Optimization of PCM/Selector stacked memory structure for decreasing reset current and improving endurance characteristics

[16p-C302-13]Power-gating architecture and performance of nonvolatile SRAM

[16p-C302-14]Comparative study of gain cells for pseudo-SRAM

[16p-C302-15]A processing-in-memory SRAM cell with XNOR function for energy minimum-point operation

[16p-C302-16]Design of an INT4-inference neural-network accelerator macro for energy minimum point operation

[16p-C302-17]Design and performance of a 10T-SRAM cell using isolated read ports for low voltage operation

[16p-C302-18]Design of a ULVR-SRAM cell for highly stable energy minimum-point operation

[16p-C302-2]Ohmic Contact to n-Ge by Bi₂Te₃/Ge quasi-vdW Junction

[16p-C302-3]Passivation of GeSn surface using ALD-GeO₂