[16p-C31-1~18] 6.4 Thin films and New materials

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16p-C31-15] Sn-Doping Concentration Dependence of Physical Properties of Epitaxial Mn-Doped ITO Thin Films

〇Saiki Kitagawa^1,2,3, Toshihiro Nakamura^2,1 (1.Graduate School of Human and Environmental Studies, Kyoto Univ., 2.ILAS, Kyoto Univ., 3.JSPS.)

Keywords:

Epitaxial growth,Transparent conducting film,Diluted magnetic semiconductor

In recent years, diluted magnetic semiconductors have attracted attention. In this study, we investigated the Sn concentration dependence of electronic, transparent, and magnetic properties in epitaxial Mn-doped ITO films to improve the quality of films. The epitaxial Mn-doped ITO films with higher Sn concentration have larger optical band gaps and carrier concentrations. The saturation magnetization increases with increasing carrier concentration. This correlation between saturation magnetization and carrier concentration indicates that the ferromagnetism in the film involves carrier-induced ferromagnetism such as RKKY exchange interaction, providing important insight into the origin of room temperature ferromagnetism of the epitaxial Mn-doped ITO films.