[16p-D63-1~17] CS.9 Code-sharing Session of 6.5 & 7.5

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[16p-D63-5] Development of growth technique of epitaxial B20-CoSi thin film on Si substrate

〇Takafumi Ishibe^1,2, Kazunori Sato³, Yuichiro Yamashita⁴, Yoshiaki Nakamura^1,2 (1.Eng. Sci., Osaka Univ., 2.OTRI, Osaka Univ., 3.Eng., Osaka Univ., 4.AIST)

Keywords:

Thermoelectric material,Silicide,Dirac band

Silicide thermoelectric film/Si is attracting much attention as a stand-alone one-chip power source for Internet of Things sensor. In recent years, B20-CoSi bulk with a peculiar electronic band structure (Dirac band and heavy hole band) near Fermi energy is one of the promising thermoelectric materials. However, there have been no studies reporting the epitaxial growth of B20-CoSi film/Si. In this study, we develop the epitaxial growth technique of B20-CoSi film/Si by introducing the growth nucleation layer between film and substrate, which controls Si atom diffusion.