[17a-B2-1~9] 15.7 Crystal characterization, impurities and crystal defects

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[17a-B2-2] Enhanced Hole Conductivity in Magnesium-Intercalated GaN Superlattice Probed by Terahertz Time-Domain Ellipsometry

〇Verdad Agulto¹, Toshiyuki Iwamoto^1,2, Kosaku Kato¹, Jia Wang³, Hiroshi Amano³, Makoto Nakajima¹ (1.Osaka Univ., 2.Nippo Precision Co., Ltd., 3.Nagoya Univ.)

Keywords:

semiconductor,nitride,terahertz

The interstitial intercalation of a two-dimensional (2D) metal into a bulk semiconductor has recently been realized in the form of the Mg-intercalated GaN superlattice (MiGS). This structure enhances hole conductivity in GaN by inducing uniaxial compressive strain, which increases hole mobility along the c-axis (out-of-plane direction), perpendicular to the interstitial layers. However, the van der Pauw method, which measures in-plane conductivity, cannot detect this enhancement in the out-of-plane direction. We demonstrate the use of terahertz time-domain ellipsometry (THz-TDE) to probe the effective conductivity of p-type GaN, which includes both in-plane and out-of-plane contributions.