The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.7 Crystal characterization, impurities and crystal defects

[17a-B2-1~9]15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 17, 2024 9:00 AM - 11:30 AM JST
Tue. Sep 17, 2024 12:00 AM - 2:30 AM UTC
B2 (Exhibition Hall B)
Hidetoshi Suzuki(Miyazaki Univ.), Haruo Sudo(GlobalWafers)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[17a-B2-1]Analysis of an oblique threading edge dislocation in 4H-SiC epilayer.

〇Chiharu Ota1, Nishio Johji1, Kushibe Mitsuhiro1, Ryosuke Iijima1 (1.R&D Center, Toshiba)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[17a-B2-2]Enhanced Hole Conductivity in Magnesium-Intercalated GaN Superlattice Probed by Terahertz Time-Domain Ellipsometry

〇Verdad Agulto1, Toshiyuki Iwamoto1,2, Kosaku Kato1, Jia Wang3, Hiroshi Amano3, Makoto Nakajima1 (1.Osaka Univ., 2.Nippo Precision Co., Ltd., 3.Nagoya Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[17a-B2-3]The effect of transparency of a crystal and the melt on twisting during CZ-Ga2O3 growth

〇Koichi Kakimoto1, Taketoshi Tomida2, Vladimir Kochurikhin2, Kei Kamada1, Satoshi Nakano3, Akira Yoshikawa4 (1.NICHe, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.IMR, Tohoku Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[17a-B2-4]Feature analysis of stable atomic configuration in SiGe alloys by theoretical simulation

〇(M2)Hibiki Bekku1, Yusuke Noda3, Koji Sueoka2 (1.Grad. Sch. Compt. Sci. Syst. Eng., Okayama Pref. Univ., 2.Fac. Compt. Sci. Syst. Eng.,Okayama Pref. Univ., 3.Kyushu Inst. Technol.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-B2-5]Demonstration for transition selective photoluminescence

〇Shinichirou Gozu1 (1.AIST)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-B2-6]Lattice constants and bandgap energies of all-inorganic metal halide perovskite-type semiconductor alloy CsSnxPb1-xBr3

〇Reo Asahara1, Masahiro Abe2, Akiko Hori2, Masato Sotome3, Takashi Kondo1,3 (1.Tokyo Univ., 2.Shibaura Univ., 3.RCAST, Tokyo Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[17a-B2-7]Fe gettering behavior of SiHx and C2Hy mixture molecular-ion-implanted silicon epitaxial wafer (2)

〇Ryo Hirose1, Ayumi Masada1, Takeshi Kadono1, Koji Kobayashi1, Akihiro Suzuki1, Sho Nagatomo1, Kazunari Kurita1 (1.SUMCO CORPORATION)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[17a-B2-8]Effect of Annealing Temperature after Electron Irradiation on Radiative Recombination of Defect Levels in Si

〇Yuto Haraguchi1, Takahiro Iwakiri1, Tomoki Harada1, Tetsuo Ikari1, Atsuhiko Fukuyama1, Shun Sasaki2, Noritomo Mitsugi2 (1.Univ. of Miyazaki, 2.SUMCO Corporation)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[17a-B2-9]Prediction of crystal defect generation by machine learning considering crystal orientation distribution

〇(M2)Kazuma Torii1, Kyoka Hara1, Kentaro Kutsukake1,2,3, Hiroaki Kudo4, Ryoji Katsube1, Noritaka Usami1,2,5 (1.Grad. Eng. Nagoya Univ., 2.IMaSS, 3.AIP RIKEN, 4.Grad. Info. Nagoya Univ., 5.InFus)
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