[17a-B3-1~8] 6.1 Ferroelectric thin films

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-B3-7] Fabrication of BiFe_0.9Co_0.1O₃ nanodot array with electron-beam-lithograghed HSQ mask (2)

〇(M1)Hajime Nakayama¹, Kota Yoshikawa¹, Koomok Lee¹, Kuniyuki Kakushima^2,3, Takuya Hoshii^2,3, Satoru Kaneko⁴, Manabu Yasui⁴, Masahito Kurouchi⁴, Kei Shigematsu^1,3,4, Masaki Azuma^1,3,4 (1.IIR Tokyo Tech., 2.Tokyo Tech., 3.Sumitomo Chemical Research Cluster, Tokyo Tech., 4.KISTEC)

Keywords:

multiferroics,microfabrication

Room-temperature-ferroelectric ferromagnetic Co-substituted BiFeO₃ is a potential candidate for low consuming non-volatile memory devices. We fabricated BFCO nanodots using HSQ hole-array-mask fabricated by electron beam lithography. Here, we report polarization reversal and change of ferroelectric and ferromagnetic domain structure in the nanodots in lateral size of 200 nm. Also, we succeeded in fabricating smaller dots into 100 nm.