[17a-C302-1~12] 13.8 Optical properties and light-emitting devices

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-C302-7] Proposal of Eu-doped ZnO red light emitting diodes using AlN as an electron blocking layer

〇Riko Masuda¹, Jun Tatebayashi¹, Shuhei Ichikawa^1,2, Masakazu Tane¹, Yasufumi Fujiwara¹ (1.Osaka Univ., 2.Research Center for UHVEM)

Keywords:

rare earth,zinc oxide,light emitting diode

Light-emitting devices based on rare-earth-doped semiconductors have attracted much attention because of their ultra-narrow emission bandwidth and high emission wavelength stability in the surrounding environment. To date, we have fabricated heterojunction LEDs using Al₂O₃ as an electron blocking layer and succeeded in obtaining Eu emission under reverse bias. In this study, we propose a p-GaN/AlN/Eu-doped ZnO(ZnO:Eu)/n-ZnO heterojunction LED structure using AlN as an electron blocking layer and ZnO:Eu as an active layer, and evaluate optical and structural properties of ZnO film and ZnO:Eu layer on AlN.