[17a-C42-1~9] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17a-C42-7] Formation and optical characteristics of GaN:Eu/GaN core-shell nanowires with high aspect ratio grown by organometallic vapor phase epitaxy

〇(M2)Ryo Yoshida¹, Jun Tatebayashi^1,2, Raiki Hada¹, Noritaka Sakabe¹, Shuhei Ichikawa^1,3, Yoshitaka Nakajima⁴, Masaaki Ashida⁵, Yasuhumi Fujiwara¹ (1.Grad. Sch. Eng., 2.QIQB, 3.Research Center for UHVEM, 4.INSD, 5.Grad. Sch. Eng. Sci., Osaka Univ.)

Keywords:

Nanowire,LED,GaN

To date, we have reported on the growth of GaN:Eu/GaN nanowires (NWs) LED by OrganoMetalic Vapar Phase Epitaxy (OMVPE) towards flexible light-emitting devices.. In this report, we fabricated NWs which have core-shell structure and high aspect ratio and evaluated optical and structural properties of NWs. Furthermore, we developed a new method to observe the luminescence distribution of Eu in a single nanowire and observed the luminescence due to Eu³⁺ ions.