[17a-D61-1~10] 10.3 Spin devices, magnetic memories and storages

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[17a-D61-5] Microstructure observation of magnetic tunnel junctions treated by flash lamp annealing

〇Akiko Imai¹, Shinya Ota^1,2, Jun Yamasaki³, Teppei Araki¹, Yasushi Kanai^1,4,6, Tomohiro Koyama^1,5,6, Tsuyoshi Sekitani¹, Daichi Chiba^1,4,5,6 (1.SANKEN, Osaka Univ., 2.The Univ. of Tokyo, 3.UHVEM, Osaka Univ., 4.SRIS, Tohoku Univ., 5.CSRN, Osaka Univ., 6.OTRI, Osaka Univ.)

Keywords:

magnetic tunnel junction,flash lamp annealing,transmission electron microscopy

The tunnel magnetoresistance ratio of 100 % has been obtained in the CoFeB/MgO systems with annealing time less than 2 seconds using the flash lamp annealing (FLA) apparatus. TEM observation reveals that a degree of crystallization and diffusion of atoms caused by FLA are different from that by conventional thermal annealing.