Presentation Information
[17a-D63-3]Fabrication Process for Planar-type Electron Emission Devices Using Graphene/h-BN/Ni-Sapphire Structure
〇(M2)Ren Mutsukawa1,3, Yoshinori Takao1, Masaya Yamamoto2,3, Yoichiro Neo2, Hiromasa Murata3, Masayoshi Nagao3, Katsuhisa Murakami3 (1.YNU, 2.Shizuoka Univ., 3.AIST)
Keywords:
Graphene/h-BN/Ni-Sapphire Structure,Hexagonal boron nitride,Graphene
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