Presentation Information

[17a-D63-3]Fabrication Process for Planar-type Electron Emission Devices Using Graphene/h-BN/Ni-Sapphire Structure

〇(M2)Ren Mutsukawa1,3, Yoshinori Takao1, Masaya Yamamoto2,3, Yoichiro Neo2, Hiromasa Murata3, Masayoshi Nagao3, Katsuhisa Murakami3 (1.YNU, 2.Shizuoka Univ., 3.AIST)

Keywords:

Graphene/h-BN/Ni-Sapphire Structure,Hexagonal boron nitride,Graphene


Comment

To browse or post comments, you must log in.Log in