Presentation Information
[17a-P01-59]Environmental dependence of electrical properties in hBN/1L-MoTe2 channel FETs
〇(M1)Taku Yoshimura1, Hiroshi Shigeno1, Kenji Watanabe2, Takashi Taniguchi2, Yusuke Hoshi1 (1.Tokyo City Univ., 2.NIMS)
Keywords:
2D Materials,MoTe2,semiconductor
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