Session Details

[17a-P01-1~66]17 Nanocarbon and Two-Dimensional Materials (Poster)

Tue. Sep 17, 2024 9:30 AM - 11:30 AM JST
Tue. Sep 17, 2024 12:30 AM - 2:30 AM UTC
P01 (Exhibition Hall A)

[17a-P01-1]The Effect of Iron Catalyst on Microwave-assisted Synthesis of Carbon Nano-wall

〇Takamasa Enomoto1, Miyu Kaneda2, Hiroyuki Kobayashi1,2, Shinpei Yamamoto1, Naoshi Ikeda2 (1.Sankei Giken Kogyo Co., Ltd., 2.Okayama Univ.)

[17a-P01-2]Synthesis of hydrogen substituted graphdiyne onto fluorine-doped tin oxide substrates

〇Hikaru Yamamoto1, Chellamuthu Jeganathan1, Hara Masanori1, Yoshimura Masamichi1 (1.Toyota Tech. Inst.)

[17a-P01-3]Development of carbon nanotube anode for all-solid-state batteries with inorganic solid electrolyte

〇Yuta Kurachi1, Shuichi Arakawa1, Masanori Hara1, Masamichi Yoshimura1 (1.Toyota Tech. Inst.)

[17a-P01-4]Fabrication and evaluation of fullerene derivative-doped C60 fullerene nanowhiskers

〇Takato Shibata1, Masanori Hara1, Masamichi Yoshimura1 (1.Toyota Tech. Inst.)

[17a-P01-6]High-speed Synthesis and Characterization of B-doped Carbon Nano-wall

〇Miyu Kaneda1, Takaki Kayahara2, Yukimasa Fukada3, Kenji Yoshii3, Tatsuo Fukuda3, Akitaka Yoshigoe3, Masaaki Kobata3, Naoshi Ikeda1, Jun Kano1, Tatsuo Fujii1 (1.Grad. Sch. of Env. Life. Nat. Sci. and Tech., Okayama Univ., 2.Faculty of Science, Okayama Univ., 3.JAEA)

[17a-P01-7]Tracking the growth rate of semiconducting and metallic carbon nanotubes under variable temperatures

〇(M2)Ryuji Fujiwara1, Shohei Chiashi1, Shigeo Maruyama1, Keigo Otsuka1 (1.Univ. of Tokyo)

[17a-P01-8]Elucidation of growth process of single-walled carbon nanotubes from Fe catalysts on alumina support layer by in situ XAFS measurement

〇Jumpei Horiuchi1, Shinya Mizuno1, Takahiro Saida1,2, Shigeya Naritsuka1, Takahiro Maruyama1,2 (1.Meijo Univ., 2.Meijo Nano Res.)

[17a-P01-9]Synthesis of nitrogen-doped expanded graphite for sodium-ion battery anodes

〇Tasuku Otsuka1, G.R.A. Kumara2, Masanori Hara1, Masamichi Yoshimura1 (1.Toyota Tech. Inst., 2.Nat. Inst. Fund. Stud.)

[17a-P01-10]Separation of Catalysts from Carbon Nanotubes Synthesized by Microwave-Assisted Heating

〇IPutu Abdi Karya1, Masakatsu Fujii1, Kohei Nakagawa2, Yota Kageyama1, Muhammad Al Jalali1, Fumihiro Nishimura3, Toyohiko Nishiumi1, Takayuki Asano1, Seitaro Mitsudo1 (1.Dept. of Appl. Phys., Univ. of Fukui, 2.FIR, Univ. of Fukui, 3.HISAC, Univ. of Fukui)

[17a-P01-11]Study on dispersant for new power generating paper based on carbon-nanotube-composite paper utilizing mist flow

〇Hiyu Mitsumaki1, Koya Arai2, Takahide Oya1,3 (1.Grad. School Eng. Sci., Yokohama National Univ, 2.Mitsubishi Materials, 3.IMS, Yokohama National Univ)

[17a-P01-12]Improving power generation efficiency of paper dye-sensitized solar cells using carbon nanotube composite papers by Introducing TiO2

〇Yi Kou1, Takahide Oya1,2 (1.Grad School Eng. Sci.,Yokohama National Univ., 2.IMS,Yokohama National Univ.)

[17a-P01-13]Performance improvement of carbon nanotube composite thread transistors by using new surfactant for its making process

〇Hiroki Kodaira1, Takahide Oya1,2 (1.Yokohama National Univ, 2.IMS, Yokohama National Univ)

[17a-P01-14]Battery-less temperature monitoring using CNT kirigami-thermoelectric device

〇Daijiro Hongu1, Ken Nishiura3, Hideki Uchida3, Masahiro Motosuke2, Takashi Nakajima1 (1.Dep. Of Appl. Phys., Tokyo Univ. of Sci., 2.Dept. of Mech. Eng., Tokyo Univ. of Sci., 3.Zeon Corp.)

[17a-P01-15]Voltage Application and Resistance Change to a-C Film using Gap Electrodes

〇Rikuta Nomura1, Kazuyoshi Ueno1 (1.Shibaura Inst. Tech.)

[17a-P01-16]Soft actuator based on carbon nanotube composite papers using kirigami technique

〇Ryodai Toyomasu1, Takahide Oya1,2 (1.Yokohama National Univ., 2.IMS, Yokohama National Univ.)

[17a-P01-17]Improving Sensitivity of CNT-based NO2 Gas Sensor by Decorating TiO2 Nano Particles

〇Hirokatsu Ito1, Mariko Murayama1,2, Xinwei Zhao1 (1.Tokyo Univ. of Science, 2.Toyo Univ. Research Institute of Industrial Technology)

[17a-P01-18]Contact formation between CNT@BNNT heteronanotubes and metal electrodes

〇Makoto Shimizu1, Taiki Inoue1, Yoshihiro Kobayashi1 (1.Osaka Univ.)

[17a-P01-19]Development of pixel separation process for bolometric CNT infrared detectors

〇Norika Fukuda1, Tomo Tanaka1,2, Noriyuki Tonouchi1,2, Megumi Kanaori1, Ryota Yuge1,2 (1.AIST, 2.NEC)

[17a-P01-20]Electrical Property Control of Nanocarbon Random Networks for Physical Reservoir Applications: Effects of Insulating Nanomaterial Addition

〇Kento Suzuki1, Taiki Inoue1, Yuta Nishina2, Yoshihiro Kobayashi1 (1.Osaka Univ., 2.Okayama Univ.)

[17a-P01-22]Magnetic Properties of Polymer Nanofibers Containing Iron-filled Carbon Nanotubes

〇Takumi Tsunekawa1, Yuji Fujiwara1, Hideki Sato1 (1.Mie Univ.)

[17a-P01-23]Graphene growth on Ge(110) from photoresist as a solid carbon source

〇(M1)Reiji Takeda1, Fumihiko Maeda1 (1.Fukuoka Inst. of Tech.)

[17a-P01-24]Step wandering process in graphene growth by Polymer-Assisted Sublimation Growth

〇(M1)Takuto Nishina1, Wataru Norimatsu1 (1.Waseda Univ.)

[17a-P01-25]Analysis of graphene growth mechanism on h-BN flakes

〇(B)Aoi Sasanuma1, Hayato Watanabe2, Yunosuke Miyashita3, Ryousuke Takatsuka3, Kenji Watanabe5, Takashi Taniguchi5, Tatsuro Hanajiri1,3,4, Ryouta Negishi1,3,4 (1.Toyo Univ., 2.Osaka Univ. Graduate School, 3.Toyo Univ. Graduate School, 4.BNC, 5.NIMS)

[17a-P01-26]Chemical and structural analysis of Ni(111) for graphene growth applications

〇Katsuyuki Yagi1, Agus Subagyo1, Makoto Sato1, Makoto Owada1, Koki Nakane1, Eiji Hatta1, Kazuhisa Sueoka1 (1.Hokkaido Univ.)

[17a-P01-27]Direct growth of graphene on substrates using a vacuum heating for bilayered C and Ni films

〇(M2)Sato Makoto1, Subagyo Agus1, Owada Makoto1, Yosino Fujinari1, Nakane Kouki1, Yagi Kazuyuki1, Hatta Eiiji1, Sueoka Kazuhisa1 (1.Hokkaido Univ.)

[17a-P01-28]Dependence of EBAC images on gate voltage for K-doped few-layer graphene FETs

〇Yuki Okigawa1, Tomoaki Masuzawa2, Hideaki Nakajima1, Toshiya Okazaki1, Takatoshi Yamada1 (1.AIST, 2.Shizuoka Univ.)

[17a-P01-29]Detailed analysis of graphene observation by optical microscope

〇Mikihiro Kato1, Xinwei Zhao1 (1.Tokyo Univ. of Sci)

[17a-P01-30]Characterization of Bromine- and Potassium-Doped Stacked Graphene by Raman Spectroscopy

〇Tomoaki Masuzawa1, Yuki Okigawa2, Takatoshi Yamada2 (1.Shizuoka Univ., 2.AIST)

[17a-P01-31]Surface morphology and crystallinity of graphene oxide thin films reduced by high temperature annealing in ethanol vapor environment

〇(M1)Satoshi Kanda1, Naoki Shimazaki1, Tomoaki Yamashita1, Tomohumi Ukai2, Shunji Kurosu2, Tatsuro Hanajiri1,2, Toru Maekawa2, Yuta Nishina3, Ryota Negishi1,2 (1.Toyo Univ. Graduate School, 2.BNC, 3.Okayama Univ.)

[17a-P01-32]Improved Homogeneity of High-Quantum-Yield Graphene Quantum Dots Separated via Column Chromatography

〇(M2)Natsuno Ishii1, Takuya Hosokai2, Toshiki Sugai1, Shota Kuwahara1 (1.Toho Univ., 2.AIST)

[17a-P01-33]Control of Electrical Properties of Stacked Graphene Using Molecular Modification

〇Rion Ikoma1, Hyoga Kasatani1, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama Gakuin Univ.)

[17a-P01-34]Molecular dynamics of thermal property control in electron-irradiated graphene

〇Ryohei Higashiyama1, Kenji Yoshida1, Masaaki Yasuda1 (1.Osaka Met. Univ.)

[17a-P01-35]Study of synthesis and electronic properties of turbostratic stacked multilayer graphene

〇(M2)Tomoaki Yamashita1, Tomofumi Ukai2, Shunji Kurosu2, Tatsuro Hanajiri1,2, Toru Maekawa2, Yuta Nishina3, Tomohiro Yamaguchi4, Koji Ishibashi4, Ryota Negishi1,2 (1.Toyo Univ. Graduate School, 2.Bio-nanoelectronics research center, 3.Okayama Univ., 4.RIKEN)

[17a-P01-36]Electrical transport properties of graphene layers grown on h-BN flake

〇(B)Yusei Terada1, Yunosuke Miyashita2, Kenji Watanabe4, Takashi Taniguchi4, Tatsuro Hanajiri1,2,3, Ryota Negishi1,2,3 (1.Toyo Univ., 2.Toyo Univ. Graduate School, 3.BNC, 4.NIMS)

[17a-P01-37]Raman spectroscopy analysis in graphene on plasmonic nano gratings

〇Manabu Iwakawa1, Shoichiro Fukushima1, Masaaki Shimatani1, Shinpei Ogawa1 (1.Mitsubishi Electric)

[17a-P01-38]Photo-thermoelectric effect-driven detection of optical communication wavelength light in graphene/hBN heterostructures

〇Makoto Ogo1, Yodai Sato1, Byunghun Oh1, Daichi Kozawa2, Ryo Kitaura2, Kenji Watanabe2, Takashi Taniguchi2, Satoshi Moriyama1, Junichi Fujikata3, Takuya Iwasaki2 (1.Tokyo Denki Univ., 2.NIMS, 3.Tokushima Univ.)

[17a-P01-39]Study on direct growth of graphene between electrodes using catalytic microstructures

〇Makoto Owada1, Agus Subagyo1, Makoto Sato1, Kouki Nakane1, Katsuyuki Yagi1, Eiji Hatta1, Kazuhisa Sueoka1 (1.Hokkaido Univ.)

[17a-P01-40]Formation of SiO2 film by ozone oxidation for graphene/Si solar cell application

〇Tohya Yoshino1, Agus Subagyo1, Makoto Owada1, Koki Nakane1, Katuyuki Yagi1, Eiji Hatta1, Sueoka Kazuhisa1 (1.Hokkaido Univ.)

[17a-P01-41]Chemical etching of silicon with photochemically reduced graphene oxide

〇(M1)Yuki Miura1, Toru Utsunomiya1, Takashi Ichii1 (1.Kyoto Univ.)

[17a-P01-42]Improvement of Doping Concentration in Multilayer Graphene Films by Thermal CVD

〇Taisei Higashino1, Kazuyoshi Ueno1 (1.Shibaura Inst. Tech.)

[17a-P01-43]Preparation of few layers graphene intercalated with Sr

〇Hideyuki Yoshikawa1, Mariko Murayama1,2, Xinwei Zhao1, Taichiro Nishio1 (1.Tokyo Univ. of Science, 2.Toyo Univ. Research Institute of Industrial Technology)

[17a-P01-44]Direct growth of BN thick film on Si substrate by atomic layer deposition

〇Jun Usami1, Yuki Okamoto1, Takeshi Fuji1 (1.AIST)

[17a-P01-45]Selection of molybdenum precursors characteristic for MoS2 layer number fine control.

〇Yuki Ono1, Yoshiki Sakuma2, Takashi Matsumoto1, Hiroki Yamada1 (1.TTS, 2.NIMS)

[17a-P01-47]Observation of SHG in highly oriented MoS2 monolayer films grown by MOCVD

〇(M1)Asato Suzuki1, Yoshiki Sakuma2, Michio Ikezawa1 (1.Tsukuba Univ., 2.NIMS)

[17a-P01-48]Crystallinity evaluation of atomically layered films using fast Fourier transform of cross-sectional TEM images

〇Naoki Matsunaga1, Takanori Shirokura2, Hitoshi Wakabayashi2 (1.Tokyo Tech, 2.Innovative Research)

[17a-P01-49]Observation of short-period Moiré superlattices by piezoresponse force microscopy

〇Kota Tanaka1, Hao Ou1, Taishi Takenobu1 (1.Nagoya Univ.)

[17a-P01-50]Strain Modulation of MoS2 by Tuning the Transfer Process

〇Mitsuhiro OKADA1, Yuki Okigawa1, Takatoshi Yamada1 (1.AIST)

[17a-P01-51]Effect of intrinsic defects caused by off-stoichiomerty on the physical properties of SnS thin films

〇(D)Taichi Nogami1, Daiki Motai1, Issei Suzuki1, Takahisa Omata1 (1.Tohoku Univ.)

[17a-P01-52]Synthesis of Janus Layered Group 13 Monochalcogenide Atomic Layers

〇(M1)Shouhei Yamaguchi1, Hong En Lim1, Keiji Ueno1 (1.Saitama Univ.)

[17a-P01-53]Charge transfer doping of MoS2 by in situ generation of dopant molecules

〇Guanting Liu1, Daisuke Kiriya1 (1.Tokyo Univ.)

[17a-P01-54]Dependence of Photocurrent of MoS2-FET on the amount of the adsorbed CuNPc

〇Tsuyoshi Takaoka1, Gaku Kosuge2, Haotian Liu2, Kazuki Kurosawa2, Sushen Chandra Devsharma2, Atsushi Ando3, Tadahiro Komeda1 (1.IMRAM, Tohoku Univ., 2.Sci, Tohoku Univ., 3.AIST)

[17a-P01-55]Influence of interfacial layer on the inverse spin Hall effect of Bi2Te3/CoFeB

〇Misako Morota1, Shogo Hatayama1, Wipakorn Jevasuwan2, Naoki Fukata2, Yuta Saito1,3 (1.AIST, 2.NIMS, 3.Tohoku Univ.)

[17a-P01-56]Electronic state modulation of MoS2 using monovalent benzyl viologen solution

〇Mao Xu1, Chen Li1, Guanting Liu1, Daisuke Kiriya1 (1.The Univ. of Tokyo)

[17a-P01-57]Insertion of Insulating Polymer Layer into Electrode Contact in WSe2 MOSFET

〇(M1)Ryoichiro Naoi1, Durgadevi Elamaran1, Daisuke Kiriya1 (1.The Univ. of Tokyo)

[17a-P01-58]The effect of electrode materials on MoTe2 vertical devices

〇Naoki Kumagai1, Haruki Sugino1, Kentaro Uzawa1, Hirotaka Tsutsui1, Takuya Iwasaki2, Shu Nakaharai3, Takayuki Tsukagoshi4, Katsuyoshi Komatsu4, Tadaomi Daibou4, Satoshi Moriyama1 (1.Tokyo Denki Univ., 2.NIMS, 3.Tokyo Univ. Tech., 4.KIOXIA)

[17a-P01-59]Environmental dependence of electrical properties in hBN/1L-MoTe2 channel FETs

〇(M1)Taku Yoshimura1, Hiroshi Shigeno1, Kenji Watanabe2, Takashi Taniguchi2, Yusuke Hoshi1 (1.Tokyo City Univ., 2.NIMS)

[17a-P01-60]Fabrication Process and Transistor Characteristics of MoS2-FET toward Graphene/MoS2 Hetero-Junction FET

〇KENTO MIMURA1, TAKAYUKI HASEGAWA1, YOSHIYUKI HARADA1, MASATOSHI KOYAMA1, TOSHIHIKO MAEMOTO1, AKIRA FUJIMOTO1 (1.Osaka Inst Tech.)

[17a-P01-61]Enhanced MoS2 Memristor Emulating Synaptic Behavior through Contact Engineering

〇(P)Elamaran Durgadevi1, Daisuke Kiriya1 (1.The Univ. of Tokyo)

[17a-P01-62]Floating gate FET based on MoS2 with a TaOx/TaS2 heterostructure

〇(M1)YUTARO SAHASHI1, MITSURU INADA1, SHINGO SATO1, KEIJI UENO2, MAHITO YAMAMOTO1 (1.Kansai Univ, 2.Saitama Univ)

[17a-P01-63]Characterization of VOx/VSe2 heterostructure-baesd ReRAM

〇(M2)Yuta Nakamura1, Mitsuru Inada1, Keiji Ueno2, Mahito Yamamoto1 (1.Kansai Univ., 2.Saitama Univ.)

[17a-P01-64]Reduction of contact resistances in metal/MoS2 junction by electric double layer doping

〇(M1)Fumiya Minatogawa1, Jyunya Mori1, Takahiko Endo2, Yasumitsu Miyata2, Taishi Takenobu1 (1.Nagoya Univ., 2.Tokyo Metropolitan Univ.)

[17a-P01-65]Electric double layer light-emitting devices of transition metal dichalcogenides

〇Keisuke Yamada1, Rei Usami1, Koshi Oi1, Takahiko Endo2, Yasumitsu Miyata2, Taishi Takenobu1 (1.Nagoya Univ., 2.Tokyo Metropolitan Univ.)

[17a-P01-66]Photovoltaic properties of methylated germanane thin-film transistors

〇Kohei Hachiya1, Yuki Hiraoka1, Hiroshi Tabata1, Mitsuhiro Katayama1, Osamu Kubo1,2 (1.Osaka Univ., 2.Gihu Univ.)