[17a-P01-1~66] 17 Nanocarbon and Two-Dimensional Materials (Poster)

English Presentation

[17a-P01-61] Enhanced MoS2 Memristor Emulating Synaptic Behavior through Contact Engineering

〇(P)Elamaran Durgadevi¹, Daisuke Kiriya¹ (1.The Univ. of Tokyo)

Keywords:

Neuromorphic,Memristor,MoS2 MOSFET

The presence of hysteresis makes MoS2 a promising candidate for memristors, suitable for neuromorphic applications where the gate and drain terminals function as pre- and postsynaptic terminals, with MoS2 serving as the resistive channel. Contact engineering, which tunes the Schottky barrier through the bias-induced motion of defects, drives resistive switching in MoS2 memristors. In this study, we investigated the impact of inserting inorganic molecules, specifically AuCl3, on MoS2 MOSFET contacts to modulate their hysteresis. This was achieved by tuning the Schottky barrier height originating from the migration of defects, aiming to emulate synaptic behavior. MoS2 flakes were exfoliated onto a SiO2 layer on a heavily doped p-type silicon substrate, and two-terminal electrodes were patterned via photolithography, followed by inorganic molecular doping with AuCl3 on the source/drain regions through drop-casting and annealing, with metal electrodes subsequently deposited using Au and a lift-off process. The introduction of AuCl3 lowered the Fermi level closer to the valence band and increased the trapped states in the band gap of MoS2, resulting in a pronounced hysteresis effect. The hysteresis effect is more significant at negative gate voltages, indicating effective positive charge traps. PSC increases with positive Vds pulses, accelerating with larger amplitudes. After 50 pulses, PSC shows enhanced response to higher Vds, highlighting memtransistor's ability in spike amplitude dependent plasticity (SADP).