[17p-A33-1~12] FS.1 Focused Session "AI Electronics"

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[17p-A33-1] [INVITED] Various Phenomena occuring in Ferroelectric Memory and their impact on reliability

〇Reika Ichihara¹, Kunifumi Suzuki¹, Yoko Yoshimura¹, Takamasa Hamai¹, Viktoria Schlykow¹, Kazuhiro Matsuo¹, Masamichi Suzuki¹, Masumi Saitoh¹ (1.Kioxia Corporation)

Keywords:

Ferroelectric memory,FeFET,HfO2

HfO₂ based ferroelectric memory has attracted much attention due to its low voltage/high speed operation and CMOS compatibility for various applications such as in-memory computing. In HfO₂ based FeFET, which is one type of ferroelectric memory, various phenomena including spontaneous polarization and many type of charge trapping/de-trapping occur, each of which is related to the device performance in different ways. In this presentation, we will introduce the diverse phenomena occurring in HfO₂ based FeFET and their impact on basic operation and reliability.