[17p-A33-1~12] FS.1 Focused Session "AI Electronics"

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-A33-2] Impact of amount of ferroelectric polarization on reliability of FeFET reservoir computing

〇Eishin Nako¹, Kasidit Toprasertpong¹, Ryosho Nakane¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:

reservoir computing,FeFET

We have proposed and experimentally demonstrated reservoir computing using ferroelectric-gate FETs (FeFETs). Although FeFETs experience degradation in memory characteristics with increased rewrite cycles, we have confirmed that the reservoir computing performance does not deteriorate. In this study, we studied the relationship between reservoir computing performance and FeFET performance degradation from the perspective of the dynamic characteristics of the device.