[17p-A41-1~9] (Open Symposium) Advanced power semiconductor striving in Japan

3:50 PM - 4:20 PM JST(6:50 AM - 7:20 AM UTC)

[17p-A41-6] Current state and future developments of SiC power semiconductor devices

〇Yasunori Tanaka¹ (1.AIST)

Keywords:

power device,SiC

With the rapid expansion of electric vehicles (EVs), the social implementation of silicon carbide (SiC) power devices is steadily advancing. As the global competition to capture market share for SiC power devices intensifies, Japanese power device manufacturers cannot deny a sense of falling behind. To strengthen sustainable industrial competitiveness over the next 10 to 20 years, it is essential not only to win the current market share competition but also to develop next-generation technologies. Therefore, it is crucial to further enhance collaboration between the industrial sector and academia.