The 85th JSAP Autumn Meeting 2024
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Session Details

Symposium (Oral)Symposium : 【Open Symposium】Advanced power semiconductor striving in Japan

[17p-A41-1~9](Open Symposium) Advanced power semiconductor striving in Japan

Tue. Sep 17, 2024 1:00 PM - 5:25 PM JST
Tue. Sep 17, 2024 4:00 AM - 8:25 AM UTC
A41 (TOKI MESSE 4F)
Yasuto Hijikata(Saitama Univ.), Kazutoshi Kojima(AIST)
1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[17p-A41-1]Future Semiconductor Strategy

〇Hidemichi Shimizu1 (1.Ministry of Economy, Trade and Industry)
Comment()
1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[17p-A41-2]ROHM's activity for wide-bandgap semiconductors

〇Seiya Kitagawa1 (1.ROHM)
Comment()
2:00 PM - 2:30 PM JST(5:00 AM - 5:30 AM UTC)

[17p-A41-3]Progress of Power Devices and Development Trends of Their Applications

〇Kazuyasu Nishikawa1 (1.Mitsubishi Electric Corporation)
Comment()
2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[17p-A41-4]Evolution and Development Trends of Power Semiconductor for Electric Vehicles

〇Hirokazu Fujiwara1 (1.MIRISE Technologies)
Comment()
3:20 PM - 3:50 PM JST(6:20 AM - 6:50 AM UTC)

[17p-A41-5]Technology Trends on Silicon Power Devices

〇Wataru Saito1 (1.Kyushu Univ.)
Comment()
3:50 PM - 4:20 PM JST(6:50 AM - 7:20 AM UTC)

[17p-A41-6]Current state and future developments of SiC power semiconductor devices

〇Yasunori Tanaka1 (1.AIST)
Comment()
4:20 PM - 4:50 PM JST(7:20 AM - 7:50 AM UTC)

[17p-A41-7]Current Status and Future Prospects of GaN Power Devices

〇Jun Suda1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)
Comment()
4:50 PM - 5:20 PM JST(7:50 AM - 8:20 AM UTC)

[17p-A41-8]Challenges on Power Electronics with Wide Bandgap Semiconductor

〇Keisuke Kusaka1 (1.Nagaoka Univ. of Tech.)
Comment()
5:20 PM - 5:25 PM JST(8:20 AM - 8:25 AM UTC)

[17p-A41-9]Closing

〇Yasunori Tanaka1,2 (1.AIST, 2.Ex-Chair, The Advanced Power SemiconductorEx-Chair,)
Comment()
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