[17p-B1-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[17p-B1-7] Effect on SiN_x passivation layer on the dark current of Mg₂Si PD arrays

〇Hideto Takei¹, Kaito Ojima¹, Syunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

photodiode,pn junction,passivation layer

We have been developing Mg₂Si-based photodetectors in the shortwave infrared region, and have achieved high photosensitivity with a single pn-junction photodiode device fabricated so far. In order to apply this technology to Mg₂Si-based shortwave infrared image sensors in the future, we are developing a process for fabricating PD arrays. SiO₂ has been used as the passivation layer on Mg₂Si, but it is necessary to consider other passivation layer in order to increase the versatility of the process in the future. In this study, pn junction PDs were fabricated on Mg₂Si substrates using SiN_x, which is widely used as an passivation layer, and their electrical characteristics were evaluated and compared with those of SiO₂ passivation layer.