[17p-B1-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-B1-9] Dependence of PL and PR spectra on Ge in-plane strain in Ge/β-FeSi2 thin films

〇Soichiro Nagatomo¹, Shintaro Ishitobi¹, Yoshikazu Terai¹ (1.Kyushu inst. of Tech)

Keywords:

semiconductor,germanium,Photo Reflectance

Ge is an indirect transition semiconductor, but it is predicted to become a direct transition semiconductor by introducing 2% in-plane tensile strain. We are aiming to introduce in-plane tensile strain in Ge thin films on β-FeSi2. We have prepared Ge(001)/β-FeSi2(100) thin films by a two-step growth method (initial growth of Ge at low temperature and high temperature growth of Ge). In this study, we measured the PL and PR spectra of these samples and verified the strain-dependent change in the electronic structure of Ge.