[17p-C301-1~11] 9.4 Thermoelectric conversion

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-C301-1] [The 56th Young Scientist Presentation Award Speech] Thermoelectric properties of strain-relaxed epitaxial Mg₃Sb₂ thin films

〇Shunya Sakane¹, Akito Ayukawa¹, Nozomu Kiridoshi¹, Wakaba Yamamoto², Akira Yasuhara², Yuichiro Yamashita³, Haruhiko Udono¹ (1.Ibaraki Univ., 2.JEOL, 3.AIST)

Keywords:

Thermoelectric materials,Zintl compounds,Epitaxial growth

We have fabricated epitaxial Mg₃Sb₂ thin films on sapphire substrates by MBE and evaluated their thermoelectric properties. The thin films have exhibited high thermoelectric power factor due to the high carrier mobility. In this study, we analyzed the thin film structures in detail and obtained information to further improve the thermoelectric properties.