[17p-C41-1~11] Plasma direct bonding technology for next-generation semiconductor and new device manufacturing

4:00 PM - 4:30 PM JST(7:00 AM - 7:30 AM UTC)

[17p-C41-7] Power Device Bonding Technology

〇Jianbo Liang¹, Ohno Yutaka², Koji Inoue², Yasuyoshi Nagai², Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ., 2.IMR Tohoku Univ.)

Keywords:

GaN,Diamond,Thermal management

Wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 possess exceptional physical properties and are increasingly used in power devices. However, these devices generate significant heat during operation, leading to performance degradation and reduced lifespan. Therefore, developing effective heat dissipation methods is critical. Diamond, renowned for its exceptionally high thermal conductivity, holds promise as an excellent heat dissipation material. Yet, direct crystal growth is challenging due to substantial differences in thermal expansion coefficients and lattice constants between diamond and SiC, GaN, and Ga2O3.Our research team has pioneered room-temperature bonding technology to achieve direct bonds with SiC, GaN, and Ga2O3, demonstrating superior thermal stability and applicability. Additionally, we have developed the world's first direct bonding technology between GaN and diamond, achieving stable bonds even under high-temperature conditions. Furthermore, we successfully bonded an AlGaN/GaN/3C-SiC layer, originally from a Si substrate, onto a diamond substrate, achieving a high-quality heterojunction interface. These advancements hold promise for improving device performance, enhancing reliability, and mitigating thermal challenges in power semiconductor applications.