[17p-C41-1~11] Plasma direct bonding technology for next-generation semiconductor and new device manufacturing | The 85th JSAP Autumn Meeting 2024

Session Details

Symposium (Oral)Symposium : Plasma direct bonding technology for next-generation semiconductor and new device manufacturing

[17p-C41-1~11]Plasma direct bonding technology for next-generation semiconductor and new device manufacturing

Tue. Sep 17, 2024 1:30 PM - 7:00 PM JST
Tue. Sep 17, 2024 4:30 AM - 10:00 AM UTC

C41 (Hotel Nikko 4F)

Kenji Ishikawa(Nagoya Univ.), Atsushi Tanide(SCREEN), Ryo Hiramatsu(Western Digital)

Download PDF Zoom

1:30 PM - 1:35 PM JST(4:30 AM - 4:35 AM UTC)

[17p-C41-1]opening

〇Hiromasa Tanaka¹ (1.Nagoya Univ.)

Download PDFComment()

1:35 PM - 2:05 PM JST(4:35 AM - 5:05 AM UTC)

[17p-C41-2]Wafer Bonding Assisted by Plasma Surface Activation and its Application

〇Kenji Takahashi¹ (1.AIST)

Download PDFComment()

2:05 PM - 2:35 PM JST(5:05 AM - 5:35 AM UTC)

[17p-C41-3]Mechanism of surface activated bonding

〇Tadatomo Suga^1,2 (1.The University of Tokyo, 2.Meisei University)

Download PDFComment()

2:35 PM - 2:50 PM JST(5:35 AM - 5:50 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-C41-4]Interfacial Characterization of Novel Bonding Dielectric Films for 3D Integration

〇Hayato Kitagawa¹, Ryosuke Sato¹, Fumihiro Inoue¹ (1.YOKOHAMA National Univ.)

Download PDFComment()

3:00 PM - 3:30 PM JST(6:00 AM - 6:30 AM UTC)

[17p-C41-5]Fast Atom Beam Source for Large-Diameter Wafer Bonding

〇Seiichi Hata¹ (1.Nagoya Univ)

Download PDFComment()

3:30 PM - 4:00 PM JST(6:30 AM - 7:00 AM UTC)

[17p-C41-6]Direct bonding of dissimilar materials using atmospheric pressure non-equilibrium plasma jet

〇Kosuke Takenaka¹, Gichiro Uchida², Yuichi Setsuhara¹ (1.Osaka Univ., 2.Meijo Univ.)

Download PDFComment()

4:00 PM - 4:30 PM JST(7:00 AM - 7:30 AM UTC)

[17p-C41-7]Power Device Bonding Technology

〇Jianbo Liang¹, Ohno Yutaka², Koji Inoue², Yasuyoshi Nagai², Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ., 2.IMR Tohoku Univ.)

Download PDFComment()

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-C41-8]GaN HEMTs on 1-inch polycrystalline diamond wafers

〇Chiharu Moriyama¹, Keisuke Kawamura², Sumito Ouchi², Hiroki Uratani², Yutaka Ohno³, Koji Inoue³, Yasuyoshi Nagai³, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.Air Water inc., 3.IMR Tohoku Univ.)

Download PDFComment()

4:55 PM - 5:25 PM JST(7:55 AM - 8:25 AM UTC)

[17p-C41-9]Flexible direct bonding method for the fabricating flexible electronics system

〇Masahito Takakuwa^1,2 (1.The University of Tokyo, 2.RIKEN)

Download PDFComment()

5:25 PM - 5:55 PM JST(8:25 AM - 8:55 AM UTC)

[17p-C41-10]Application of surface activated bonding to photonic devices

〇Eiji Higurashi¹ (1.Tohoku Univ.)

Download PDFComment()

6:00 PM - 7:00 PM JST(9:00 AM - 10:00 AM UTC)

[17p-C41-11]Panel discussion

〇Atsushi Tanide^1,2, Hiromasa Tanaka², Kenji Ishikawa², Kenji Takahashi³, Tadatomo Suga⁴, Masahito Takakuwa⁴, Seiichi Hata⁵, Kosuke Takenaka⁶, Jianbo Liang⁷, Eiji Higurashi⁸ (1.SCREEN HD, 2.Nagoya Univ. cLPS, 3.AIST, 4.Tokyo Univ., 5.Nagoya Univ., 6.Osaka Univ., 7.Osaka Metropolitan Univ., 8.Tohoku Univ.)

Download PDFComment()

Back to Category List