[17p-C42-1~11] Emergence of Novel Functions in Nitride and III/V Group Compound Semiconductor Nanostructures

5:00 PM - 5:30 PM JST(8:00 AM - 8:30 AM UTC)

[17p-C42-8] Growth of GaN-based nanocrystals and its application to light-emitting devices

〇Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ.)

Keywords:

GaN,GaInN,nanocrystal

In this presentation, crystal growth of the GaN nanowires, the GaInN nanopyramid, and the core-shell structure including the GaInN-based multi-quantum shells will be described.