Session Details
[17p-C42-1~11]Emergence of Novel Functions in Nitride and III/V Group Compound Semiconductor Nanostructures
Tue. Sep 17, 2024 1:30 PM - 6:30 PM JST
Tue. Sep 17, 2024 4:30 AM - 9:30 AM UTC
Tue. Sep 17, 2024 4:30 AM - 9:30 AM UTC
C42 (Hotel Nikko 4F)
Motoaki Iwaya(Meijo Univ.), Keisuke YAMANE(Toyohashi Univ. of Tech.), Hiroshi Fujioka(The Univ. of Tokyo), Takashi Matsuoka(Tohoku Univ.)
[17p-C42-1][Fellow International 2024 Special Lecture] Insights on GaN bulk crystal growth and GaN-on-GaN technology.
〇Michal Stanislaw Bockowski1 (1.Institute of High Pressure Physics (IHPP) of the Polish Academy of Sciences (PAS))
[17p-C42-2]Multiscale Characterization of Widegap Semiconductors Multilayers
〇Tomoyuki Tanikawa1, Yuya Ishii1, Jun Yamasaki2, Atsushi Tanaka3, Yoshio Honda3, Masahiro Uemukai1, Ryuji Katayama1 (1.Grad. of Eng., Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.IMaSS, Nagoya Univ.)
[17p-C42-3]Local Structure Analysis by using an X-ray Nanobeam for Ga1-xInxN/GaN 5-quantum Shells Grown on a GaN Substrate and a Single Sample Extracted from it
〇Takao Miyajima1, Shoya Ota1, Ryota Kobayashi1, Nobuhiro Yasuda2, Tomoyo Nakao3, Shigeo Arai3, Kazuki Nishimura1, Koki Aoyama1, Kazushi Sumitani2, Yasuhiro Imai2, Shigeru Kimura2, Satoshi Kamiyama1, Daichi Imai1 (1.Meijo Univ,, 2.JASRI, 3.Nagoya Univ.)
[17p-C42-4]Multiscale III-V semiconductor nanostructures
〇Fumitaro Ishikawa1 (1.Hokkaido Univ. RCIQE)
[17p-C42-5]Selective lateral MOVPE growth of InP on SOI (001) substrates for III-V/Si integration
〇Hiroya Homma1, Hiroki Sugiyama1, Tatsurou Hiraki1, Tomonari Sato1, Shinji Matsuo1 (1.NTT)
[17p-C42-6]Selective-area MOVPE of AlInP fins on InP(111)A
〇Yuki Azuma1, Ziye Zheng1, Junichi Motohisa1, Katsuhiro Tomioka1 (1.Hokkaido Univ.)
[17p-C42-7]Low-temperature-grown dilute bismide III-V compound semiconductors for novel functions
〇Yoriko Tominaga1, Fumitaro Ishikawa2, Noriaki Ikenaga3, Osamu Ueda4 (1.Hiroshima Univ., 2.Hokkaido Univ., 3.Kanazawa Inst. Tech., 4.Meiji Univ.)
[17p-C42-8]Growth of GaN-based nanocrystals and its application to light-emitting devices
〇Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ.)
[17p-C42-9]230-nm Band Far-UV Second Harmonic Generation in Polarity Inverted AlN Bilayer Waveguide Pumped by CW Semiconductor Laser
〇Hiroto Honda1, Asai Akinori2, Tome Kento2, Morishita Keiji2, Kato Shin2, Fujiwara Hiroyasu2, Shojiki Kanako3,4, Miyake Hideto3, Uemukai Masahiro1, Tanikawa Tomoyuki1, Katayama Ryuji1 (1.Osaka Univ., 2.Hamamatsu Photonics K. K, 3.Mie Univ., 4.Kyoto Univ.)
[17p-C42-10]Hetero-interface formation technology with high Al content difference for improving injection efficiency of AlGaN-based UV-B LDs
〇Takumu Saito1, Rintaro Miyake1, Ryoya Yamada1, Yoshinori Imoto1, Shundai Maruyama1, Yusuke Sasaki1, Shogo Karino1, Sho Iwayama1, Hideto Miyake2, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.Mie Univ.)
[17p-C42-11]Characterization of AlGaN-based vertical p-n diodes with distributed polarization doping
〇Yoshio Honda1,2,3, Takeru Kumabe4, Maki Kushimoto4, Hiroshi Amano1,2,3 (1.IMaSS Nagoya Univ., 2.D Center Nagoya Univ., 3.IAR Nagoya Univ., 4.Grad. Sch. Eng. Nagoya Univ.)