[17p-P01-1~16] 6.4 Thin films and New materials

[17p-P01-3] Composition-dependent physical and electronic properties of bismuth iron oxyfluoride thin films

〇Akiko Kamigaito¹, Mizuho Sano¹, Kei Shigematsu², Satoshi Demura³, Hiroshi Kumigashira⁴, Tsukasa Katayama⁵, Yasushi Hirose⁶, Akira Chikamatsu¹ (1.Ochanomizu Univ., 2.MSL, Tokyo Tech., 3.CST, Nihon Univ., 4.IMRAM, Tohoku Univ., 5.Hokkaido Univ., 6.Tokyo Metropolitan Univ.)

Keywords:

bismuth iron oxyfluoride,multiferroic materials,pulsed laser deposition

We have previously fabricated epitaxial thin films of perovskite-type bismuth iron oxyfluoride Bi_1-xBa_xFeO_3-xF_x, for which multiferroic properties had been predicted, with a composition of x = 0.2 and revealed ferroelectric properties of the films at room temperature. In this study, we fabricated films with different compositions between x = 0 and 0.4 and investigated their ferroelectricity and electronic states. Ferroelectric measurements and X-ray photoelectron spectroscopy revealed that bismuth iron oxyfluoride has different physical properties and electronic states depending on its composition.