[17p-P01-1~16] 6.4 Thin films and New materials

[17p-P01-5] Fabrication of iron oxide thin films by drop-dry deposition

〇Koki Kawamura¹, Ichimura Masaya¹ (1.NIT)

Keywords:

semiconductor thin film

Iron(III) oxide, Fe₂O₃, is an n-type semiconductor with a band gap of 2.0 ~ 2.2 eV and is non-toxic to humans. In this study, iron oxide thin films were deposited by drop-dry deposition (DDD), which is an easy and large-area deposition method by dropping a small amount of solution onto a substrate and heating it from below. The thin films were evaluated by Auger electron spectroscopy and other methods. As a result, the fabricated thin film was transparent iron oxide Fe₂O₃, and its electrical conductivity was confirmed.