[17p-P01-1~16] 6.4 Thin films and New materials

[17p-P01-8] Growth of hexagonal ZnSnN₂ layer by UHV sputter epitaxy method (III)

〇Haruto Ikeda¹, Toshiki Nagasawa¹, Keisuke Yoshida¹, Hiroyuki Shinoda¹, Nobuki Mutsukura¹ (1.Tokyo Denki Univ.)

Keywords:

ZnO,supptering,thin film

We have been growing ZnSnN₂ layers using a sputtering system. In the previous study, we grew a ZnSnN₂ layer on a ZnO template with relatively low lattice mismatch with ZnSnN₂. As a result, it was found that epitaxial growth was achieved while maintaining the crystal orientation relationship. In this study, we grew ZnSnN₂ layers on ZnO templates with different surface morphologies and investigated the obtained crystallinity and other properties.