[18a-A23-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[18a-A23-13] Comparison of electron and hole by a silicon PN single-charge pump

〇Gento Yamahata¹, Akira Fujiwara¹ (1.NTT BRL)

Keywords:

silicon,single electron,quantum dot

For current standard applications, high-precision operation with a good yield of a single-charge pump that periodically transfers charge one by one is required. In this paper, we report a comparison of single-electron transfer and single-hole transfer using a PN single charge pump with P- and N-type electrodes. This results in the superiority of single holes up to several hundred MHz. This is an important knowledge for future device design.