Session Details
[18a-A23-1~13]13.5 Semiconductor devices/ Interconnect/ Integration technologies
Wed. Sep 18, 2024 9:00 AM - 12:30 PM JST
Wed. Sep 18, 2024 12:00 AM - 3:30 AM UTC
Wed. Sep 18, 2024 12:00 AM - 3:30 AM UTC
A23 (TOKI MESSE 2F)
Masumi Saitoh(Kioxia), Hidehiro Asai(AIST)
[18a-A23-1]Quantitative Understanding of Temperature Dependence of Sub-threshold Swing in Si MOSFETs at Cryogenic Temperatures
Min-soo Kang1, Kasidit Toprasertpong,1, Hiroshi Oka2, Takahiro Mori2, Mitsuru Takenaka1, 〇Schin-ichi Takagi1 (1.The Univ. Tokyo, 2.AIST)
[18a-A23-2]Negative Back Bias Effect of Cryogenic 200 nm SOI MOSFET
〇Ryusei Ri1, Takayuki Mori1, Kousuke Hatta1, Ryousuke Kobayashi1, Hiroshi Oka2, Takahiro Mori2, Jiro Ida1 (1.Kanazawa Univ., 2.AIST)
[18a-A23-3]Understanding Large Vth Shift by Hot Carrier Injection at Cryogenic Temperatures
〇(D)Shunsuke Shitakata1,2, Hiroshi Oka1, Kimihiko Kato1, Takumi Inaba1, Shota Iizuka1, Hidehiro Asai1, Takahiro Mori1 (1.AIST, 2.APPI, Keio)
[18a-A23-4]Measuring Variability and Random Telegraph Noise at Cryogenic Temperatures using Transistor Matrix Array
〇Tomoko Mizutani1, Kiyoshi Takeuchi1, Takuya Saraya1, Hiroshi Oka2, Takahiro Mori2, Masaharu Kobayashi1,3, Toshiro Hiramoto1 (1.IIS, Univ. of Tokyo, 2.AIST, 3.d.lab, Univ. of Tokyo)
[18a-A23-5]Precise Extraction of Effective Mobility in Si nMOSFETs at Cryogenic Temperatures Using Quasi-Static C-V Technique
〇(M2)Yutong Chen1, Zhao Jin1, Xueyang Han1, Hiroshi Oka2, Takahiro Mori2, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1.The Univ. of Tokyo, 2.AIST)
[18a-A23-6]Influence of Channel Resistance on Split C-V Characteristics in MOSFETs and the Correction Based on a Transmission Model for Accurate Evaluation of Effective Mobility
〇(M2)Zhao Jin1, Yutong Chen1, Xueyang Han1, Hiroshi Oka2, Takahiro Mori2, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1.U. Tokyo, Eng., 2.AIST)
[18a-A23-7]Si two-dimensional-superlattice MOS transistor and effective-mass enhancement
〇(M2)Yuto Sugimoto1, Hiro Akahori1, Kota Takeuchi1, Yuryo Tozawa1, Hiroaki Satoh1,2, Masahiro Hori1,2, Yukinori Ono1,2 (1.Shizuoka Univ., 2.RIE Shizuoka Univ.)
[18a-A23-8]First-principal calculations on valley splitting in Si quantum wells stressed in the [110] direction
〇Toshiaki Hayashi1, Hiroyuki Kageshima2, Jinichiro Noborisaka1, Katsuhiko Nishiguchi1 (1.NTT BRL, 2.Shimane Univ.)
[18a-A23-9]Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (12) -Lattice relaxation (Ⅲ)-
〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
[18a-A23-10]Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (13) -Effects of level depth-
〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
[18a-A23-11]Large-scale Characterization of Double Quantum Dots in Isoelectronic-Trap-Assisted Tunnel Field-Effect Transistors
〇Yusuke Chiashi1, Takumi Inaba1, Yagishita Atsushi1, Makoto Kato1, Tomohiro Ishikawa1, Hiroshi Oka1, Kimihiko Kato1, Hidehiro Asai1, Minoru Ogura1, Takashi Nakayama1, Shota Iizuka1, Takahiro Mori1 (1.AIST)
[18a-A23-12]Evaluation of magnetic field-dependent quantum capacitance in a p-type Si double quantum dot
〇(M1)Riku Wada1, Raisei Mizokuchi1, Chihiro Kondo1, Ryuta Tsuchiya2, Toshiyuki Mine2, Digh Hisamoto2, Hiroyuki Mizuno2, Jun Yoneda1, Tetsuo Kodera1 (1.Tokyo Tech, 2.R&D Group, Hitachi Ltd)
[18a-A23-13]Comparison of electron and hole by a silicon PN single-charge pump
〇Gento Yamahata1, Akira Fujiwara1 (1.NTT BRL)